AGMSEMI AGM1099D

AGMSEMI · FETs & Power MOSFETs · MPN AGM1099D

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Specifications

Gate Charge(Qg)2.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)47pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation34.5W
Reverse Transfer Capacitance (Crss@Vds)4.8pF
RDS(on)94mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)121pF

Technical details

100V 8A 34.5W Surface Mount TO-252

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