AGMSEMI AGM1095MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM1095MAP

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)25.4nC@10V;33nC@10V
Output Capacitance(Coss)46pF;86pF
Current - Continuous Drain(Id)7A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V;1.6V
Pd - Power Dissipation33.7W;32W
Reverse Transfer Capacitance (Crss@Vds)32pF;40pF
RDS(on)96mΩ@10V;220mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)999pF;1.6nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 100V 33.7W 7A Surface Mount PDFN(3.3x3.3)

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