AGMSEMI AGM1095M

AGMSEMI · FETs & Power MOSFETs · MPN AGM1095M

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Specifications

Gate Charge(Qg)25.4nC@10V;33nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)46pF;86pF
Current - Continuous Drain(Id)7A;6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V;1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)32pF;40pF
RDS(on)100mΩ@10V;240mΩ@-10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)999pF;1.6nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 100V 2.5W 7A Surface Mount SOP-8

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