AGMSEMI AGM1065M

AGMSEMI · FETs & Power MOSFETs · MPN AGM1065M

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W
RDS(on)150mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)845pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 100V 10A 2.5W Surface Mount SOP-8

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