AGMSEMI AGM1030MA

AGMSEMI · FETs & Power MOSFETs · MPN AGM1030MA

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Specifications

Gate Charge(Qg)8nC@10V;12.5nC@10V
Drain to Source Voltage100V;100V
Output Capacitance(Coss)171pF;56pF
Current - Continuous Drain(Id)20A;15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation50W;69W
Reverse Transfer Capacitance (Crss@Vds)3.2pF;8.6pF
RDS(on)25mΩ@10V;95mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)445pF;700pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 100V 20A 69W Surface Mount PDFN-8(5x6)

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