AGMSEMI AGM1030AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM1030AP

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Specifications

Gate Charge(Qg)8nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)171pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)6.1pF
RDS(on)26mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)445pF

Technical details

100V 20A Surface Mount PDFN3.3x3.3-8

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