AGMSEMI AGM1010A-F

AGMSEMI · FETs & Power MOSFETs · MPN AGM1010A-F

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)710pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation79W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)6.2mΩ@10V;7.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.75nF
Type-

Technical details

100V 70A 79W Surface Mount PDFN-8L(5x6)

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