AGMSEMI AGM1010A-E

AGMSEMI · FETs & Power MOSFETs · MPN AGM1010A-E

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Specifications

Gate Charge(Qg)39.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)972pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.453nF

Technical details

N-Channel 100V 90A 125W Surface Mount PDFN(5x6)

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