AGMSEMI AGM100P35D

AGMSEMI · FETs & Power MOSFETs · MPN AGM100P35D

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)315pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)30mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.4nF

Technical details

100V 40A 100W Surface Mount TO-252

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