AGMSEMI AGM085N10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM085N10D

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Specifications

Gate Charge(Qg)36.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)732pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)8mΩ@10V;11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.52nF

Technical details

N-Channel 100V 80A 78W Surface Mount TO-252

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