AGMSEMI AGM085N10C1

AGMSEMI · FETs & Power MOSFETs · MPN AGM085N10C1

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Specifications

Gate Charge(Qg)36.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)565pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.978nF

Technical details

N-Channel 100V 80A 78W Through Hole TO-220C

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