AGMSEMI · FETs & Power MOSFETs · MPN AGM065N10F
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| Gate Charge(Qg) | 39.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.037nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 128W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 6.2mΩ@10V;8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.487nF |
N-Channel 100V 100A 128W Through Hole TO-220F