AGMSEMI AGM065N10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM065N10D

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Specifications

Gate Charge(Qg)39.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.023nF
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation112W
Reverse Transfer Capacitance (Crss@Vds)34pF
RDS(on)5.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.51nF

Technical details

N-Channel 100V 95A 112W Surface Mount TO-252

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