AGMSEMI AGM056N10H

AGMSEMI · FETs & Power MOSFETs · MPN AGM056N10H

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.29nF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)5.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.25nF

Technical details

N-Channel 100V 140A 227W Surface Mount TO-263

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