AGMSEMI AGM056N10C

AGMSEMI · FETs & Power MOSFETs · MPN AGM056N10C

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)2.19nF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)5.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.25nF
TypeN-Channel

Technical details

N-Channel 100V 140A 227W Through Hole TO-220

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