AGMSEMI AGM056N10A

AGMSEMI · FETs & Power MOSFETs · MPN AGM056N10A

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)705pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation113W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)4.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

N-Channel 100V 100A 113W Surface Mount PDFN-8(5x6)

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