AGMSEMI AGM045P10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM045P10D

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Specifications

Gate Charge(Qg)147nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)36mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)8.056nF

Technical details

P-Channel 100V 38A 107W Surface Mount TO-252

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