AGMSEMI · FETs & Power MOSFETs · MPN AGM042N10D
No reviews yet — be the first to review AGMSEMI AGM042N10D.
| Gate Charge(Qg) | 65.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 898pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 4.1mΩ@10V;6.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.736nF |
N-Channel 100V 110A 125W Surface Mount TO-252