AGMSEMI AGM042N10A

AGMSEMI · FETs & Power MOSFETs · MPN AGM042N10A

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Specifications

Gate Charge(Qg)39.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.342nF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation142W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)4.2mΩ@10V;6.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.98nF

Technical details

N-Channel 100V 110A 142W Surface Mount PDFN(5x6)

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