AGMSEMI AGM038N10A

AGMSEMI · FETs & Power MOSFETs · MPN AGM038N10A

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)67nC@10V
Output Capacitance(Coss)622pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation147W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)3.8mΩ@10V;5.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.739nF

Technical details

N-Channel 100V 120A 147W Surface Mount PDFN-8(5x6)

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