AGMSEMI · FETs & Power MOSFETs · MPN AGM035N10H
No reviews yet — be the first to review AGMSEMI AGM035N10H.
| Gate Charge(Qg) | 67.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 3.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.5nF |
100V 150A 2.5V 208W 3.5mΩ@4.5V 1 N-channel TO-263 Single FETs, MOSFETs RoHS