AGMSEMI AGM035N10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM035N10D

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)112A
Output Capacitance(Coss)1.445nF
Operating Temperature --55℃~+150℃
Pd - Power Dissipation131W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.587nF
TypeN-Channel

Technical details

N-Channel 100V 112A 131W Surface Mount TO-252

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