AGMSEMI AGM035N10C

AGMSEMI · FETs & Power MOSFETs · MPN AGM035N10C

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.473nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation227W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.131nF

Technical details

N-Channel 100V 160A 227W Through Hole TO-220C

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