AGMSEMI AGM028N08A

AGMSEMI · FETs & Power MOSFETs · MPN AGM028N08A

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Specifications

Drain to Source Voltage85V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)1.24nF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF
TypeN-Channel

Technical details

N-Channel 85V 170A 167W Surface Mount PDFN5x6

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