AGMSEMI · FETs & Power MOSFETs · MPN AGM025N10AT
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 122nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 3.03nF |
| Current - Continuous Drain(Id) | 253A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.15nF |
N-Channel 100V 253A 250W Through Hole TO-247