AGMSEMI AGM01P15AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM01P15AP

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)86pF
Current - Continuous Drain(Id)7.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)315mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.734nF

Technical details

P-Channel 100V 7.9A 33W Surface Mount PDFN3.3x3.3

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