AGMSEMI AGM012N10LL

AGMSEMI · FETs & Power MOSFETs · MPN AGM012N10LL

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Specifications

Gate Charge(Qg)172nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)385A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation441W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)1.03mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.598nF

Technical details

100V 385A 3V 441W 1.03mΩ@10V 1 N-channel TOLL-8L Single FETs, MOSFETs RoHS

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