Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD1110EPAL
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| Current - Continuous Drain(Id) | 3mA |
|---|---|
| RDS(on) | 500Ω |
| Pd - Power Dissipation | 600mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | - |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 25pF |
| Gate Charge(Qg) | - |
| Operating Temperature | 0℃~+70℃ |
| Output Capacitance(Coss) | - |
3mA 500Ω 600mW 1V 2 N-Channel PDIP-8 FET, MOSFET Arrays RoHS