Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD110908ASAL
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 12mA |
| RDS(on) | 500Ω@4.8V |
| Pd - Power Dissipation | 500mW |
| Gate Threshold Voltage (Vgs(th)) | 820mV |
| Drain to Source Voltage | 10.6V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 0.1pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.5pF |
| Gate Charge(Qg) | - |
| Operating Temperature | 0℃~+70℃ |
12mA 500Ω@4.8V 500mW 820mV 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS