Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD110900ASAL
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | - |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 104kΩ |
| Gate Threshold Voltage (Vgs(th)) | 20mV |
| Drain to Source Voltage | 10.6V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 0.1pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Operating Temperature | 0℃~+70℃ |
500mW 104kΩ 20mV 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS