Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD110808SCL
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| Current - Continuous Drain(Id) | 12mA |
|---|---|
| RDS(on) | 500Ω |
| Pd - Power Dissipation | 500mW |
| Gate Threshold Voltage (Vgs(th)) | 820mV |
| Drain to Source Voltage | 10V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 0.1pF |
| Number | 4 N-Channel |
| Input Capacitance(Ciss) | 2.5pF |
| Gate Charge(Qg) | - |
| Operating Temperature | 0℃~+70℃ |
| Output Capacitance(Coss) | - |
12mA 500Ω 500mW 820mV 4 N-Channel SOIC-16 FET, MOSFET Arrays RoHS