Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD1107SBL
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 2mA |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 1.8kΩ@5V |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 10V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 4 P-Channel |
| Input Capacitance(Ciss) | 3pF |
| Gate Charge(Qg) | - |
| Operating Temperature | 0℃~+70℃ |
2mA 500mW 1.8kΩ@5V 1.2V 4 P-Channel SOIC-14 FET, MOSFET Arrays RoHS