Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD1102BSAL
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| Current - Continuous Drain(Id) | 16mA |
|---|---|
| RDS(on) | 270Ω |
| Pd - Power Dissipation | 500mW |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 10V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Operating Temperature | 0℃~+70℃ |
| Output Capacitance(Coss) | - |
16mA 270Ω 500mW 1.2V 2 P-Channel SOIC-8 FET, MOSFET Arrays RoHS