Advanced Linear Devices ALD1101BSAL

Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD1101BSAL

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Specifications

Current - Continuous Drain(Id)40mA
RDS(on)75Ω
Pd - Power Dissipation500mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage10V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)10pF
Gate Charge(Qg)-
Operating Temperature0℃~+70℃
Output Capacitance(Coss)-

Technical details

40mA 75Ω 500mW 1V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS

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