Advanced Linear Devices ALD1101APAL

Advanced Linear Devices · FETs & Power MOSFETs · MPN ALD1101APAL

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Specifications

Current - Continuous Drain(Id)40mA
Pd - Power Dissipation500mW
RDS(on)75Ω@5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage-
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)10pF
Gate Charge(Qg)-
Operating Temperature0℃~+70℃

Technical details

40mA 500mW 75Ω@5V 1V 2 N-Channel PDIP-8 FET, MOSFET Arrays RoHS

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