YONGYUTAI SS8550 Y2

YONGYUTAI · Transistors (BJTs) · MPN SS8550 Y2

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain350
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1.2A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 1.2A 100MHz 1W Surface Mount SOT-89-3L

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