YONGYUTAI PBSS4350Z

YONGYUTAI · Transistors (BJTs) · MPN PBSS4350Z

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain200
Emitter-Base Voltage VEBO9V
Pd - Power Dissipation1.35W
ConfigurationStandalone
typeNPN
Number1 NPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))290mV

Technical details

Bipolar (BJT) Transistor 50V 3A 100MHz 1.35W Surface Mount SOT-223

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