YONGYUTAI MMBTA05

YONGYUTAI · Transistors (BJTs) · MPN MMBTA05

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO4V
DC Current Gain300
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 300mW Surface Mount SOT-23

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