YONGYUTAI MMBT5401 200-300

YONGYUTAI · Transistors (BJTs) · MPN MMBT5401 200-300

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))500mV

Technical details

150V 300 1 PNP PNP 600mA SOT-23 Single Bipolar Transistors RoHS

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