YONGYUTAI L8550HQ

YONGYUTAI · Transistors (BJTs) · MPN L8550HQ

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Specifications

Current - Collector Cutoff150nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 25V 1.5A 225mW Surface Mount SOT-23

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