YONGYUTAI 2SB1132

YONGYUTAI · Transistors (BJTs) · MPN 2SB1132

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO5V
DC Current Gain390
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor PNP 32V 1A 150MHz 500mW Surface Mount SOT-89

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