YONGYUTAI 2SA812

YONGYUTAI · Transistors (BJTs) · MPN 2SA812

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain600
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor PNP 45V 0.1A 0.2W Surface Mount SOT-23

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