YONGYUTAI 2N5401S

YONGYUTAI · Transistors (BJTs) · MPN 2N5401S

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Specifications

Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO150V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 150V 0.6A 0.3W Surface Mount SOT-23

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