YONGYUTAI 13001

YONGYUTAI · Transistors (BJTs) · MPN 13001

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)8MHz
Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO8V
DC Current Gain30
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))400mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 450V 200mA 8MHz 625mW Surface Mount SOT-23

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