YFW MMBTSD123

YFW · Transistors (BJTs) · MPN MMBTSD123

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO15V
Emitter-Base Voltage VEBO6.5V
DC Current Gain150
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 15V 1A 260MHz 0.2W Surface Mount SOT-23

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