YFW D882S-GR

YFW · Transistors (BJTs) · MPN D882S-GR

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Specifications

Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO30V
DC Current Gain400
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation625mW
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 30V 3A 625mW Through Hole TO-92

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