YFW BD682

YFW · Transistors (BJTs) · MPN BD682

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Specifications

Collector - Emitter Voltage VCEO100V
DC Current Gain750
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation40W
typePNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))2.5V@1.5A,30mA

Technical details

100V 750 PNP 4A TO-126 Single Bipolar Transistors RoHS

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