YFW 2SD1616A TB

YFW · Transistors (BJTs) · MPN 2SD1616A TB

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain600
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation750mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 100MHz 0.75W Through Hole TO-92

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