YFW 2N6517

YFW · Transistors (BJTs) · MPN 2N6517

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO350V
DC Current Gain200
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA

Technical details

Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92

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