YANGJIE · Transistors (BJTs) · MPN UMD3N
No reviews yet — be the first to review YANGJIE UMD3N.
| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 30 |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 10kΩ |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| type | NPN+PNP |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
| Voltage - Input(Max)(VI(off)) | 500mV |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-363